- 专利标题: Transfer chamber and method of using a transfer chamber
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申请号: US14101945申请日: 2013-12-10
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公开(公告)号: US10446710B2公开(公告)日: 2019-10-15
- 发明人: Aaron P. Webb , Charles T. Carlson , Paul Forderhase , William T. Weaver , Robert Brent Vopat
- 申请人: Varian Semiconductor Equipment Associates, Inc.
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L31/18
- IPC分类号: H01L31/18 ; H01J37/317 ; H01L21/67 ; H01J37/18 ; H01J37/32
摘要:
An ion implanter and method for facilitating expeditious performance of maintenance on a component of the ion implanter in a manner that reduces downtime while increasing throughput of the ion implanter. The ion implanter includes a process chamber, a transfer chamber connected to the process chamber, a first isolation gate configured to controllably seal the transfer chamber from the process chamber, and a second isolation gate configured to controllably seal the transfer chamber from an atmospheric environment, wherein a component of the ion implanter can be transferred between the process chamber and the transfer chamber for performing maintenance on the component outside of the process chamber. Performing maintenance on a component of the ion implanter includes the steps of transferring the component from the process chamber to the transfer chamber, sealing the transfer chamber, venting the transfer chamber to atmospheric pressure, an opening the transfer chamber to an atmospheric environment.
公开/授权文献
- US20140165908A1 TRANSFER CHAMBER AND METHOD OF USING A TRANSFER CHAMBER 公开/授权日:2014-06-19
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