A high-frequency optoelectronic module, that includes a first chip, a substrate and at least one optoelectronic unit. The first chip includes a set of high-frequency electrical IO interfaces. The at least one optoelectronic unit includes a group of high-frequency electrical IO interfaces and a group of high-frequency optical IO interfaces. The group of high-frequency optical IO interfaces is coupled to the group of high-frequency electrical IO interfaces. The substrate is coupled to the first chip and the at least one optoelectronic chip. The set of high-frequency electrical IO interfaces is coupled to the group of high-frequency electrical IO interfaces via a group of conductors. A length of each conductor of the group of conductors is of a scale that does not exceed a millimetric scale. The at least one optoelectronic circuit is configured to (a) convert high-frequency output electrical signals from the first chip to high-frequency output optical signals, and (b) convert high-frequency input optical signals sent towards the first chip to high-frequency input electrical signals. The high-frequency it not smaller than one hundred gigabits per second.