Invention Grant
- Patent Title: Method of manufacturing a semiconductor device including a ternary alloy layer formed by a microwafe anneal process
-
Application No.: US15253074Application Date: 2016-08-31
-
Publication No.: US10453688B2Publication Date: 2019-10-22
- Inventor: Chao-Hsin Chien , Chi-Wen Liu , Chung-Chun Hsu , Wei-Chun Chi
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL CHIAO TUNG UNIVERSITY
- Applicant Address: TW Hsinchu TW Hsinchu
- Assignee: National Chiao Tung University,Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: National Chiao Tung University,Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/24
- IPC: H01L21/24 ; H01L21/285 ; H01L29/47 ; H01L29/66 ; H01L29/872 ; H01L29/45 ; H01L29/16
Abstract:
A method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy including components of the first metal layer, second metal layer, and the semiconductor substrate.
Public/Granted literature
- US20180061642A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2018-03-01
Information query
IPC分类:
