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![11-arylcinnolino[2,3-f]phenanthridinium salts and method for producing the same](/abs-image/US/2024/04/30/US11970492B2/abs.jpg.150x150.jpg)
公开(公告)号：US11970492B2
公开(公告)日：2024-04-30
申请号：US17161992
申请日：2021-01-29
IPC分类号： C07D471/04 , C07D495/14
CPC分类号： C07D471/04 , C07D495/14
摘要： The present invention provides 11-arylcinnolino[2,3-f]phenanthridinium salt compounds and method for producing the same by highly regioselective synthesis of 11-phenylimino[2,3-f]phenanthridin-9-ium salts from 2-azobiaryls and alkenes under catalysis of palladium, through double oxidative C—H coupling of alkenes, to give the polycyclic cinnolinophenanthridinium salts in moderate yields. The reaction mechanism involves ortho C—H olefination of 2-azobiaryls by alkenes, intramolecular aza-Michael addition, β-hydride elimination, electrophilic palladation followed by intramolecular C—H activation and reductive elimination. The prepared quaternary ammonium salts are candidate materials for solution-processable OLED and bioimaging materials.
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公开(公告)号：US11964881B2
公开(公告)日：2024-04-23
申请号：US16939984
申请日：2020-07-27
发明人： Pu-Wei Wu , Yi-Chieh Hsieh , Han-Yi Wang , Kuang-Chih Tso , Tzu-Ying Chan , Chung-Kai Chang , Chi-Shih Chen , Yu-Ting Cheng
CPC分类号： C01G55/004 , A61L27/025 , B82Y30/00 , B82Y40/00 , C01P2004/64
摘要： A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.
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公开(公告)号：US11741599B2
公开(公告)日：2023-08-29
申请号：US16988716
申请日：2020-08-10
发明人： Shen Chi , Po-Lin Lin , Ying-Hsiang Lee , Yu-Min Liu , Long Hsu , Ruo-Jing Ho , Chang Francis Hsu , Han-Ping Huang
CPC分类号： G06T7/0012 , A61F2/82 , G06F17/18 , A61F2002/823 , G06T2207/30104
摘要： Disclosed herein is a method of treating a subject having arterial stenosis. The method comprises: (a) providing a plurality of image frames of an artery of the subject taken in sequence; (b) in a plurality of cross-sections of the artery, determining a maximum diameter and a minimum diameter of each of the plurality of cross-sections of the artery among the plurality of image frames of the step (a); (c) calculating an average vasodilation ratio of the artery base on the maximum diameter and the minimum diameter determined in the step (b); and (d) treating the subject based on the average vasodilation ratio calculated in the step (c), by implanting a stent to the subject when the average vasodilation ratio is equal to or greater than 0.2; or administering to the subject an effective amount of a vasodilator when the average vasodilation ratio is less than 0.2.
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公开(公告)号：US11458627B2
公开(公告)日：2022-10-04
申请号：US17069843
申请日：2020-10-13
发明人： Kai-Tai Song , Cheng-An Yang
摘要： A system of a robot for human following includes the robot faced toward a first direction. The robot includes a detecting device, a controlling device and a mobile device. The detecting device detects a target human and a obstacle. The controlling device generates a first parameter according to a first vector between the target human and the robot, generates a second parameter according to a second vector between the obstacle and the robot, and generates a driving command according to a first resultant force parameter generated from the first parameter and the second parameter and an angle value between the first direction and the first vector to drive the robot. The mobile device performs the driving command to enable the robot dodging the at least one obstacle and following the target human, simultaneously. A controlling method of a robot for human following is also disclosed herein.
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公开(公告)号：US11452472B2
公开(公告)日：2022-09-27
申请号：US16671652
申请日：2019-11-01
发明人： Yu-Ting Cheng , Erh-Chieh Liang , Kun-Lin Tsou , Yih-Sharng Chen
IPC分类号： A61B5/1473 , A61B5/145 , A61B5/0205
摘要： A miniaturized sensing probe and a manufacturing method thereof are provided. The miniaturized sensing probe includes: a probe substrate including a probe part and a circuit connection part; a sensor disposed on the probe part and electrically connected to the circuit connection part; and a needle unit used to accommodate the probe part of the probe substrate; wherein the sensor performs sensing when placed into an analyte through the needle unit and transmits a sensing signal through the circuit connection part. The miniaturized sensing probe of the present invention may be easily placed into the analyte without the use of other instrument or surgery. This means is of benefit to a clinician performing an early diagnosis on a patient with a peripheral vascular disease or monitoring the biological value of the muscle during surgery in real time.
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公开(公告)号：US11437587B2
公开(公告)日：2022-09-06
申请号：US16695371
申请日：2019-11-26
摘要： Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.
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公开(公告)号：US20220148923A1
公开(公告)日：2022-05-12
申请号：US17161951
申请日：2021-01-29
发明人： Bing-Yue Tsui , Fang-Hsin Lu , Yi-Ting Shih
IPC分类号： H01L21/8234 , H01L29/66 , H01L29/78
摘要： A method for increasing an oxide thickness at trench corner of an UMOSFET is provided, comprising providing an N-type substrate, and forming an N-type drift region, N-type and P-type heavily doped regions and P-type body therein. A trench is defined through lithography, and a pad oxide is formed along the trench through oxidation or deposition process. An oxidation barrier is formed upon the pad oxide. A thermal oxidation process is employed, so a corner oxide is effectively formed at the trench corner. After removing the pad oxide and oxidation barrier, various back-end processes are carried out to complete the transistor structure. The invention is aimed to increase oxide thickness near the trench bottom, and can be applied to high voltage devices, such as SiC. The conventional electric field crowding effect occurring at the trench corner is greatly solved, thus increasing breakdown voltages thereof
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公开(公告)号：US11322398B2
公开(公告)日：2022-05-03
申请号：US16702282
申请日：2019-12-03
发明人： Edward-Yi Chang , Yueh-Chin Lin , Ming-Yen Tsai , Po-Sheng Chang
IPC分类号： H01L21/768 , H01L21/027 , H01L21/285 , H01L23/532 , G03F7/32 , G03F7/16 , G03F7/20 , G03F7/38
摘要： A process for making an interconnect of a group III-V semiconductor device includes the steps of applying a positive photoresist layer and an image-reversible photoresist layer, subjecting the image-reversible photoresist and positive photoresist layers to patternwise exposure, subjecting the image-reversible photoresist layer to image reversal bake, subjecting the image-reversible photoresist and positive photoresist layers to flood exposure, subjecting the image-reversible photoresist and positive photoresist layers to development, depositing a diffusion barrier layer, depositing a copper layer, and removing the image-reversible photoresist and positive photoresist layers.
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公开(公告)号：US11306363B2
公开(公告)日：2022-04-19
申请号：US16915254
申请日：2020-06-29
IPC分类号： C12Q1/6886
摘要： A microRNA (miRNA) expression signature for predicting triple-negative breast cancer (TNBC) recurrence is provided. The miRNA expression signature consists essentially of hsa-miR-139-5p, hsa-miR-10b-5p, hsa-miR-486-5p, hsa-miR-455-3p, hsa-miR-107, hsa-miR-146b-5p, hsa-miR-324-5p, and hsa-miR-20a-5p.
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公开(公告)号：US11293459B2
公开(公告)日：2022-04-05
申请号：US16533163
申请日：2019-08-06
发明人： Yeng-Yung Tsui , Chi-Chuan Wang , Ting-Kai Wei , Hsueh-Han Chin
摘要： A fan device including high voltage power source, conductive blade, first electrode and a resistance device is provided. Connecting side of the conductive blade is connected to first electric contact of the high voltage power source, and the conductive blade further includes a vibration side, wherein the conductive blade is extended from the connecting side to the vibration side along a first direction. The first electrode electrically connected to the second electric contact of the high voltage power source. The first electrode is disposed on a side of the vibration side of the conductive blade, and located in the vibrating range of the vibration side. The resistance device is connected between the conductive blade and the second electric contact in series.
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