- 专利标题： Silicon carbide (SiC) device with improved gate dielectric shielding
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申请号： US15626690申请日： 2017-06-19
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公开(公告)号： US10453950B2公开(公告)日： 2019-10-22
- 发明人: Martin Domeij
- 申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/16 ; H01L29/10 ; H01L29/06 ; H01L29/66 ; H01L29/08
摘要：
In one general aspect, an apparatus can include a silicon carbide (SiC) device can include a gate dielectric, a first doped region having a first conductivity type, a source, a body region of the first conductivity type, and a second doped region having a second conductivity type. The second doped region can have a first portion and a second portion. The first portion can be disposed between the first doped region and the body region and the second portion can be disposed between the first doped region and the gate dielectric. The first portion of the second doped region can have a width less than a width of the first doped region.
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