Invention Grant
- Patent Title: Quantum dot photoresist and manufacturing method thereof, display substrate and display device
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Application No.: US15542339Application Date: 2017-01-03
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Publication No.: US10459336B2Publication Date: 2019-10-29
- Inventor: Yonglian Qi , Bin Zhang , Tingting Zhou
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201610282658 20160429
- International Application: PCT/CN2017/000037 WO 20170103
- International Announcement: WO2017/185812 WO 20171102
- Main IPC: G03F7/004
- IPC: G03F7/004 ; B82Y20/00 ; G03F7/00 ; G03F7/033 ; G03F7/027 ; G02F1/1335

Abstract:
A quantum dot photoresist and a manufacturing method thereof, a display substrate and a display device are provided. The manufacturing method of the quantum dot photoresist includes: mixing quantum dots, photodiffusion materials and photoresist mother solution; surface treatment is carried out on the photodiffusion materials or the quantum dots. The quantum dot photoresist prepared by the manufacturing method of the quantum dot photoresist can be applied to the display device, and the photodiffusion materials can refract incident light to the quantum dots, so that light irradiated onto the quantum dots is increased, and thus, a problem of a low utilization rate of the incident light can be solved, and a display effect of the display device can be enhanced.
Public/Granted literature
- US20180217496A1 Quantum Dot Photoresist and Manufacturing Method Thereof, Display Substrate and Display Device Public/Granted day:2018-08-02
Information query
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