Invention Grant
- Patent Title: Memory device supporting rank-level parallelism and memory system including the same
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Application No.: US15628960Application Date: 2017-06-21
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Publication No.: US10459853B2Publication Date: 2019-10-29
- Inventor: Wongyu Shin , Leesup Kim , Youngsuk Moon , Yongkee Kwon , Jaemin Jang
- Applicant: SK hynix Inc. , Korea Advanced Institute of Science and Technology
- Applicant Address: KR Icheon KR Daejeon
- Assignee: SK HYNIX INC.,KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: SK HYNIX INC.,KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Icheon KR Daejeon
- Priority: KR10-2016-0144151 20161101
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F3/06 ; G06F13/36

Abstract:
A memory system may include: a memory controller; a plurality of ranks; and a rank shared bus configured to couple the memory controller and the plurality of ranks. Each of the plurality of ranks may include: a plurality of banks; a rank bus coupled to the plurality of banks and configured to selectively transmit data to the rank shared bus or an intermediate buffer and selectively receive data from the rank shared bus or the intermediate buffer; and an intermediate buffer configured to be selectively coupled to the rank bus or the rank shared bus, according to a first signal from the memory controller.
Public/Granted literature
- US20180121376A1 MEMORY DEVICE SUPPORTING RANK-LEVEL PARALLELISM AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2018-05-03
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