Invention Grant
- Patent Title: Method for patterning a power metallization layer, electronic device and method for processing an electronic device
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Application No.: US16003687Application Date: 2018-06-08
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Publication No.: US10461031B2Publication Date: 2019-10-29
- Inventor: Petra Fischer , Johanna Schlaminger , Monika Cornelia Voerckel , Peter Zorn
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102017112780 20170609
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L23/532 ; H01L21/3213 ; H01L21/768 ; H01L23/528
Abstract:
According to various embodiments, a method for processing an electronic device may include: forming a patterned hard mask layer over a power metallization layer, the patterned hard mask layer exposing at least one surface region of the power metallization layer; and patterning the power metallization layer by wet etching of the exposed at least one surface region of the power metallization layer.
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