A method for manufacturing a semiconductor structure includes the following steps. A first carrier is adhered to a first surface of a wafer by a first temporary bonding layer. A second surface of the wafer facing away from the first carrier is etched to form at least one through hole and at least one trench, in which a conductive pad of the wafer is exposed through the through hole. An isolation layer is formed on the second surface of the wafer, a sidewall of the through hole, and a sidewall of the trench. A second carrier is adhered to the second surface of the wafer by a second temporary bonding layer, and thus the through hole and the trench are covered by the second carrier. The first carrier and the first temporary bonding layer are removed.