-
公开(公告)号:US12237354B2
公开(公告)日:2025-02-25
申请号:US17683917
申请日:2022-03-01
Applicant: XINTEC INC.
Inventor: Tsang-Yu Liu , Shu-Ming Chang , Chaung-Lin Lai
IPC: H01L27/146
Abstract: Chip packages and methods for forming the same are provided. The method includes providing a substrate having upper and lower surfaces, and having a chip region and a scribe-line region surrounding the chip region. The substrate has a dielectric layer on its upper surface. A masking layer is formed over the substrate to cover the dielectric layer. The masking layer has a first opening exposing the dielectric layer and extending in the extending direction of the scribe-line region to surround the chip region. An etching process is performed on the dielectric layer directly below the first opening, to form a second opening that is in the dielectric layer directly below the first opening. The masking layer is removed to expose the dielectric layer having the second opening. A dicing process is performed on the substrate through the second opening.
-
公开(公告)号:US20180175101A1
公开(公告)日:2018-06-21
申请号:US15848600
申请日:2017-12-20
Applicant: XINTEC INC.
Inventor: Yen-Shih Ho , Tsang-Yu Liu , Chia-Sheng Lin , Chaung-Lin Lai
IPC: H01L27/146 , H01L23/00 , H01L21/683
Abstract: A method for manufacturing a semiconductor structure includes the following steps. A first carrier is adhered to a first surface of a wafer by a first temporary bonding layer. A second surface of the wafer facing away from the first carrier is etched to form at least one through hole and at least one trench, in which a conductive pad of the wafer is exposed through the through hole. An isolation layer is formed on the second surface of the wafer, a sidewall of the through hole, and a sidewall of the trench. A second carrier is adhered to the second surface of the wafer by a second temporary bonding layer, and thus the through hole and the trench are covered by the second carrier. The first carrier and the first temporary bonding layer are removed.
-
公开(公告)号:US10461117B2
公开(公告)日:2019-10-29
申请号:US15848600
申请日:2017-12-20
Applicant: XINTEC INC.
Inventor: Yen-Shih Ho , Tsang-Yu Liu , Chia-Sheng Lin , Chaung-Lin Lai
IPC: H01L27/146 , H01L21/683 , H01L23/00
Abstract: A method for manufacturing a semiconductor structure includes the following steps. A first carrier is adhered to a first surface of a wafer by a first temporary bonding layer. A second surface of the wafer facing away from the first carrier is etched to form at least one through hole and at least one trench, in which a conductive pad of the wafer is exposed through the through hole. An isolation layer is formed on the second surface of the wafer, a sidewall of the through hole, and a sidewall of the trench. A second carrier is adhered to the second surface of the wafer by a second temporary bonding layer, and thus the through hole and the trench are covered by the second carrier. The first carrier and the first temporary bonding layer are removed.
-
公开(公告)号:US11319208B2
公开(公告)日:2022-05-03
申请号:US16941465
申请日:2020-07-28
Applicant: XINTEC INC.
Inventor: Tsang-Yu Liu , Chaung-Lin Lai , Shu-Ming Chang
Abstract: A chip package includes a first die, a second die, a molding material, and a redistribution layer. The first die includes a first conductive pad. The second die is disposed on the first die and includes a second conductive pad. The molding material covers the first die and the second die. The molding material includes a top portion, a bottom portion, and an inclined portion adjoins the top portion and the bottom portion. The top portion is located on the second die, and the bottom portion is located on the first die. The redistribution layer is disposed along the top portion, the inclined portion, and the bottom portion. The redistribution layer is electrically connected to the first conductive pad and the second conductive pad.
-
公开(公告)号:US11746003B2
公开(公告)日:2023-09-05
申请号:US17711067
申请日:2022-04-01
Applicant: XINTEC INC.
Inventor: Tsang-Yu Liu , Chaung-Lin Lai , Shu-Ming Chang
CPC classification number: B81B7/007 , B81B7/0074 , B81C1/00301 , B81B2207/07
Abstract: A chip package includes a first die, a second die, a molding material, and a redistribution layer. The first die includes a first conductive pad. The second die is disposed on the first die and includes a second conductive pad. The molding material covers the first die and the second die. The molding material includes a top portion, a bottom portion, and an inclined portion adjoins the top portion and the bottom portion. The top portion is located on the second die, and the bottom portion is located on the first die. The redistribution layer is disposed along the top portion, the inclined portion, and the bottom portion. The redistribution layer is electrically connected to the first conductive pad and the second conductive pad.
-
公开(公告)号:US09997473B2
公开(公告)日:2018-06-12
申请号:US15409289
申请日:2017-01-18
Applicant: XINTEC INC.
Inventor: Yen-Shih Ho , Tsang-Yu Liu , Chia-Sheng Lin , Chaung-Lin Lai
CPC classification number: H01L23/562 , H01L21/4817 , H01L21/52 , H01L21/54 , H01L21/76898 , H01L21/78 , H01L23/055 , H01L23/18 , H01L23/3114 , H01L23/522 , H01L24/16 , H01L25/065 , H01L27/14618 , H01L27/14687 , H01L2224/16237
Abstract: A chip package including a substrate is provided. The substrate has a first surface and a second surface opposite thereto. The substrate includes a sensing or device region which is adjacent to the first surface. A recess is in the substrate. The recess extends from the second surface towards the first surface, and vertically overlaps the sensing or device region. A redistribution layer is electrically connected to the sensing or device region, and extends from the second surface into the recess. A method of forming the chip package is also provided.
-
-
-
-
-