Invention Grant
- Patent Title: Light emitting device
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Application No.: US15894981Application Date: 2018-02-13
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Publication No.: US10461140B2Publication Date: 2019-10-29
- Inventor: Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/32 ; H01L51/52 ; H01L27/12
Abstract:
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
Public/Granted literature
- US20180190745A1 LIGHT EMITTING DEVICE Public/Granted day:2018-07-05
Information query
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