- 专利标题： GaN device with floating field plates
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申请号： US15878309申请日： 2018-01-23
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公开(公告)号： US10461161B1公开(公告)日： 2019-10-29
- 发明人: Daniel Marvin Kinzer
- 申请人： Navitas Semiconductor, Inc.
- 申请人地址： US CA El Segundo
- 专利权人： NAVITAS SEMICONDUCTOR, INC.
- 当前专利权人： NAVITAS SEMICONDUCTOR, INC.
- 当前专利权人地址： US CA El Segundo
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L29/778 ; H01L29/20
摘要：
A lateral transistor includes a source a gate and a drain connection to a transition layer within a semiconductor substrate. One or more capacitively coupled floating field plates are connected to the source connection such that the source voltage is uniformly distributed across the field plates.
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