公开(公告)号：US11362577B2

公开(公告)日：2022-06-14

申请号：US16828747

申请日：2020-03-24

申请人： NAVITAS SEMICONDUCTOR, INC.

发明人： Santosh Sharma ,  Daniel Marvin Kinzer

IPC分类号： H02M1/08 ,  H02M3/158 ,  H03K17/081

摘要： A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

公开(公告)号：US10461161B1

公开(公告)日：2019-10-29

申请号：US15878309

申请日：2018-01-23

申请人： Navitas Semiconductor, Inc.

发明人： Daniel Marvin Kinzer

IPC分类号： H01L29/40 ,  H01L29/778 ,  H01L29/20

摘要： A lateral transistor includes a source a gate and a drain connection to a transition layer within a semiconductor substrate. One or more capacitively coupled floating field plates are connected to the source connection such that the source voltage is uniformly distributed across the field plates.

公开(公告)号：US20190158086A1

公开(公告)日：2019-05-23

申请号：US15961781

申请日：2018-04-24

申请人： Navitas Semiconductor, Inc.

发明人： Daniel Marvin Kinzer ,  Santosh Sharma ,  Ju Zhang

IPC分类号： H03K17/687 ,  H03K19/0175 ,  H02M1/36 ,  H02M1/38 ,  H02M3/158

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.

公开(公告)号：US20170163258A1

公开(公告)日：2017-06-08

申请号：US15431641

申请日：2017-02-13

申请人： NAVITAS SEMICONDUCTOR, INC.

发明人： Daniel Marvin Kinzer ,  Santosh Sharma ,  Ju Zhang

IPC分类号： H03K17/687 ,  H02M3/158 ,  H02M1/38 ,  H03K19/0175 ,  H02M1/36

CPC分类号： H03K17/687 ,  H02M1/08 ,  H02M1/36 ,  H02M1/38 ,  H02M3/1588 ,  H03K19/017509 ,  H03K2217/0063 ,  H03K2217/0072 ,  Y02B70/1466 ,  Y02B70/1483

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.

公开(公告)号：US20170155391A1

公开(公告)日：2017-06-01

申请号：US15431632

申请日：2017-02-13

申请人： NAVITAS SEMICONDUCTOR, INC.

发明人： Daniel Marvin Kinzer ,  Santosh Sharma ,  Ju Zhang

IPC分类号： H03K19/0185 ,  H01L23/528 ,  H01L29/40 ,  H01L29/10 ,  H01L29/417 ,  H01L29/20 ,  H01L27/088

CPC分类号： H02J7/0052 ,  H01L23/528 ,  H01L25/072 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L2924/00 ,  H01L2924/0002 ,  H02M1/088 ,  H02M3/155 ,  H02M3/157 ,  H02M3/1584 ,  H02M3/1588 ,  H02M2001/0048 ,  H03K3/012 ,  H03K3/356017 ,  H03K17/102 ,  H03K19/018507 ,  Y02B70/1466 ,  Y02B70/1483

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

公开(公告)号：US11251709B2

公开(公告)日：2022-02-15

申请号：US16820405

申请日：2020-03-16

申请人： Navitas Semiconductor, Inc.

发明人： Thomas Ribarich ,  Daniel Marvin Kinzer ,  Tao Liu ,  Marco Giandalia ,  Victor Sinow

IPC分类号： G05F1/573 ,  G05F3/26 ,  H02M3/158 ,  H02M1/00

摘要： A circuit is disclosed. The circuit includes a current detecting FET, configured to generate a current signal indicative of the value of the current flowing therethrough, an operational transconductance amplifier (OTA) configured to output a current in response to the voltage of the current signal, and a resistor configured to receive the current and to generate a voltage in response to the received current, where the generated voltage is indicative of the value of the current flowing through the current detecting FET. The current detecting FET is configured to become nonconductive in response to the generated voltage indicating that the current flowing through the current detecting FET is greater than a threshold.

公开(公告)号：US10778219B2

公开(公告)日：2020-09-15

申请号：US16554602

申请日：2019-08-28

申请人： NAVITAS SEMICONDUCTOR, INC.

发明人： Santosh Sharma ,  Marco Giandalia ,  Daniel Marvin Kinzer ,  Thomas Ribarich

IPC分类号： H03L5/00 ,  H03K17/687 ,  H03K3/037 ,  H03K19/0185 ,  H02M1/08 ,  H01L23/00 ,  H02M1/36

摘要： A half bridge GaN circuit is disclosed. The half bridge GaN circuit includes a first power node having a first power voltage, where the first power voltage is referenced to a switch voltage at the switch node. The half bridge GaN circuit also includes a VMID power node having a VMID power voltage, where the VMID power voltage is referenced to the first power voltage and is less than the first power voltage by a DC voltage. The half bridge GaN circuit also includes a logic circuit, where a negative power terminal of the logic circuit is connected to the VMID node, and where a positive power terminal of the first logic circuit is connected to the first power node, where the logic circuit is configured to generate a logic output voltage, which controls the conductivity of the high side power switch.

公开(公告)号：US10666147B1

公开(公告)日：2020-05-26

申请号：US16378529

申请日：2019-04-08

申请人： Navitas Semiconductor, Inc.

发明人： Thomas Ribarich ,  Daniel Marvin Kinzer ,  Tao Liu ,  Marco Giandalia ,  Victor Sinow

IPC分类号： H02M3/158 ,  H02M1/00

摘要： A GaN resonant circuit is disclosed. The GaN resonant circuit includes a power switch configured to be selectively conductive according to one or more gate signals, and configured to generate a switch signal indicative of the value of the current flowing therethrough. The GaN resonant circuit also includes a power switch driver, configured to generate the gate signals in response to one or more control signals, where the power switch driver is configured to cause the power switch to become nonconductive in response to the switch signal indicating that the value of the current flowing through the power switch has transitioned across a threshold value.

公开(公告)号：US10530169B2

公开(公告)日：2020-01-07

申请号：US16151695

申请日：2018-10-04

申请人： Navitas Semiconductor, Inc.

发明人： Daniel Marvin Kinzer ,  Santosh Sharma ,  Ju Zhang

IPC分类号： H02M3/158 ,  H02J7/00 ,  H02M1/088 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H01L27/088 ,  H01L23/528 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L23/495 ,  H01L27/02 ,  H01L23/62 ,  H02M1/00 ,  H02M3/155

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

公开(公告)号：US10193554B1

公开(公告)日：2019-01-29

申请号：US15814317

申请日：2017-11-15

申请人： Navitas Semiconductor, Inc.

发明人： Santosh Sharma ,  Marco Giandalia ,  Daniel Marvin Kinzer ,  Thomas Ribarich

IPC分类号： H03L5/00 ,  H03K19/0185 ,  H03K17/08 ,  H03K17/22 ,  H01L27/02 ,  G05F1/56 ,  H01L23/495 ,  H01L23/00 ,  H01L25/065

摘要： A half bridge GaN circuit is disclosed. The circuit includes a low side power switch configured to be selectively conductive according to one or more input signals, a high side power switch configured to be selectively conductive according to the one or more input signals, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a capacitor, and a logic circuit, wherein the capacitor is configured to capacitively couple a signal based on the input signals to the logic circuit, and the logic circuit is configured to control the conductivity of the high sigh power switch based on the capacitively coupled signal.