- Patent Title: Graphene and power storage device, and manufacturing method thereof
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Application No.: US14507872Application Date: 2014-10-07
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Publication No.: US10461332B2Publication Date: 2019-10-29
- Inventor: Hiroatsu Todoriki , Yumiko Saito , Takahiro Kawakami , Kuniharu Nomoto , Mikio Yukawa
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2011-217897 20110930
- Main IPC: H01M4/583
- IPC: H01M4/583 ; H01M4/133 ; H01G11/36 ; H01G11/22 ; H01G11/32 ; H01G9/042 ; H01M4/04 ; H01M4/1393 ; H01M4/587 ; B82Y30/00 ; B82Y40/00 ; H01M4/139 ; H01M4/62 ; H01M6/16 ; H01M10/0566 ; C01B32/23 ; C01B32/192 ; H01M10/0525

Abstract:
The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
Public/Granted literature
- US20150064565A1 GRAPHENE AND POWER STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-03-05
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