Invention Grant
- Patent Title: MEMS device integrated with a semiconductor integrated circuit and manufacturing method thereof
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Application No.: US15373489Application Date: 2016-12-09
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Publication No.: US10472232B2Publication Date: 2019-11-12
- Inventor: Tsong-Lin Shen , Chien-Chung Su , Chih-Cheng Wang , Yu-Chih Chuang , Sheng-Wei Hung , Min-Hung Wang , Chin-Tsai Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B7/02 ; H04R19/04 ; H04R19/00 ; H04R7/16 ; H04R31/00
Abstract:
A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.
Public/Granted literature
- US20180162725A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2018-06-14
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