Invention Grant
- Patent Title: Nonvolatile memory system and a method of operating the nonvolatile memory system
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Application No.: US14727079Application Date: 2015-06-01
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Publication No.: US10474585B2Publication Date: 2019-11-12
- Inventor: Young-min Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0067063 20140602
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/1009 ; G06F12/02

Abstract:
A nonvolatile memory system includes: a nonvolatile memory device that includes a nonvolatile memory cell array and a page buffer; and a memory controller that loads into the page buffer mapping data that is stored in the nonvolatile memory cell array, and in response to a logical address received from outside the memory controller, translates the logical address into a physical address based on the mapping data that is loaded into the page buffer.
Public/Granted literature
- US20150347314A1 NONVOLATILE MEMORY SYSTEM AND A METHOD OF OPERATING THE NONVOLATILE MEMORY SYSTEM Public/Granted day:2015-12-03
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