Invention Grant
- Patent Title: Memory device communicating with system on chip through at least two channels, electronic device including the same, and operating method of electronic device
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Application No.: US16006082Application Date: 2018-06-12
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Publication No.: US10474593B2Publication Date: 2019-11-12
- Inventor: Kwanghyun Kim , Ki-Seok Oh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0161959 20171129
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G11C7/10 ; G06F13/40 ; G06F3/06 ; H01L25/065

Abstract:
An electronic device includes a memory and a system on chip (SoC). The memory device includes a first memory cell area assigned to a first channel and a second memory cell area assigned to a second channel. The SoC includes a first processing unit and a second processing unit. The first processing unit is configured to transmit a first command for accessing the first memory cell area to the memory device through the first channel. The second processing unit is configured to transmit a second command for accessing the second memory cell area to the memory device through the second channel. The memory device is configured such that a bandwidth of the first channel and a bandwidth of the second channel are different from each other.
Public/Granted literature
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