Disclosed is an integrated protecting circuit, which detects ESD and EOS pulses to prevent an over-voltage from being applied to a semiconductor device. The integrated protecting circuit includes a first detector configured to detect an occurrence of an electrical over-stress between a first node to which a first voltage is applied and a second node to which a second voltage is applied, a second detector configured to detect an occurrence of an electrostatic discharge between the first and second nodes, a determination circuit configured to receive separate outputs of the first and second detectors at the same time and to generate a control signal, and a clamping device configured to perform a turn on/off operation in response to the control signal such that a voltage between the first and second nodes is clamped into a constant voltage.