A memory circuit includes electrically programmable memory cells arranged in a non-volatile memory cell array along rows and columns, word lines, each word line coupled with one or more memory cells, non-volatile marking memory cells, wherein at least one word line of the word lines is associated with one or more marking memory cells, and marking bit lines, each associated with marking memory cells, marking source lines, each associated with marking memory cells, wherein, for marking memory cells, a physical connection from an associated marking source line and/or from an associated marking bit line to the marking memory cells defines those marking memory cells to a non-changeable state, wherein the marking memory cells are configured to identify the associated word line of respective marking memory cells in the non-changeable memory state.