Invention Grant
- Patent Title: Semiconductor device having stress-neutralized film stack and method of fabricating same
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Application No.: US15231390Application Date: 2016-08-08
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Publication No.: US10475847B2Publication Date: 2019-11-12
- Inventor: Chi-Ming Lu , Chih-Hui Huang , Sheng-Chan Li , Jung-Chih Tsao , Yao-Hsiang Liang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/3205 ; H01L21/3213 ; H01L27/146
Abstract:
A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.
Public/Granted literature
- US20170317134A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2017-11-02
Information query
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