公开(公告)号：US10796996B2

公开(公告)日：2020-10-06

申请号：US15688936

申请日：2017-08-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi-Ming Lu ,  Jung-Chih Tsao ,  Yao-Hsiang Liang ,  Chih-Chang Huang ,  Han-Chieh Huang

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: A semiconductor device includes a substrate, a dielectric layer disposed on the substrate, and a conductive stack disposed within the dielectric layer. The conductive stack includes at least one first conductive layer, a second conductive layer disposed over the at least one first conductive layer, and a contact structure disposed between the at least one first conductive layer and the second conductive layer. The contact structure includes a contact via electrically connecting the at least one first conductive layer to the second conductive layer, and a glue layer conformal to sidewalls and a bottom surface of the contact via. The glue layer has isolated lattices and an amorphous region at which the isolated lattices are uniformly distributed.

公开(公告)号：US11854980B2

公开(公告)日：2023-12-26

申请号：US17011561

申请日：2020-09-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi-Ming Lu ,  Jung-Chih Tsao ,  Yao-Hsiang Liang ,  Chih-Chang Huang ,  Han-Chieh Huang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/528 ,  H01L23/532 ,  H01L25/065

CPC classification number: H01L23/53266 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/5226

Abstract: A method of forming a semiconductor device, comprising: forming a first conductive layer on an active device of a substrate; forming a dielectric layer on the first conductive layer; forming a through hole passing through the dielectric layer to expose a portion of the first conductive layer; conformally depositing a glue layer in the through hole to cover the portion of the first conductive layer comprising: forming a plurality of isolated lattices in an amorphous region at which the isolated lattices are uniformly distributed and extend from a top surface of the glue layer and terminate prior to reach a bottom of the glue layer, wherein the glue layer has a predetermined thickness; depositing a conductive material on the glue layer within the through hole, thereby forming a contact via; and forming a second conductive layer on the contact via over the first conductive layer.

公开(公告)号：US12142628B2

公开(公告)日：2024-11-12

申请号：US17859834

申请日：2022-07-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ming Lu ,  Chih-Hui Huang ,  Sheng-Chan Li ,  Jung-Chih Tsao ,  Yao-Hsiang Liang

IPC: H01L21/3213 ,  H01L21/285 ,  H01L21/3205 ,  H01L27/146

Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.

公开(公告)号：US10510798B2

公开(公告)日：2019-12-17

申请号：US16154839

申请日：2018-10-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi-Ming Lu ,  Chih-Hui Huang ,  Jung-Chih Tsao ,  Yao-Hsiang Liang ,  Chih-Chang Huang ,  Ching-Ho Hsu

IPC: H01L27/146

Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.

公开(公告)号：US11387274B2

公开(公告)日：2022-07-12

申请号：US16680043

申请日：2019-11-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ming Lu ,  Chih-Hui Huang ,  Sheng-Chan Li ,  Jung-Chih Tsao ,  Yao-Hsiang Liang

IPC: H01L27/146 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/3205

Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.

公开(公告)号：US10475847B2

公开(公告)日：2019-11-12

申请号：US15231390

申请日：2016-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ming Lu ,  Chih-Hui Huang ,  Sheng-Chan Li ,  Jung-Chih Tsao ,  Yao-Hsiang Liang

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L27/146

Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.

公开(公告)号：US20190043915A1

公开(公告)日：2019-02-07

申请号：US16154839

申请日：2018-10-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi-Ming Lu ,  Chih-Hui Huang ,  Jung-Chih Tsao ,  Yao-Hsiang Liang ,  Chih-Chang Huang ,  Ching-Ho Hsu

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14629 ,  H01L27/1463

Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.

公开(公告)号：US10134801B2

公开(公告)日：2018-11-20

申请号：US15048936

申请日：2016-02-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi-Ming Lu ,  Chih-Hui Huang ,  Jung-Chih Tsao ,  Yao-Hsiang Liang ,  Chih-Chang Huang ,  Ching-Ho Hsu

IPC: H01L27/146

Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.