Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15971139Application Date: 2018-05-04
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Publication No.: US10475882B2Publication Date: 2019-11-12
- Inventor: Shigeaki Saito , Yoshito Nakazawa , Hitoshi Matsuura , Yukio Takahashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-107956 20170531
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/739 ; H01L29/40 ; H01L29/423 ; H01L29/45 ; H01L29/04
Abstract:
The reliability of a semiconductor device is improved. A contact trench for coupling a field plate and a field limiting ring situated at the corner part of a semiconductor device is formed of a first straight line part and a second straight line part arranged line symmetrically with respect to the crystal orientation . Respective one ends of the first straight line part and the second straight line part are coupled at the crystal orientation , and the first straight line part and the second straight line part are set to extend in different directions from the crystal orientation and the crystal orientation .
Public/Granted literature
- US20180350910A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-06
Information query
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