Invention Grant
- Patent Title: Method for manufacturing a semiconductor device with a cobalt silicide film
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Application No.: US15869005Application Date: 2018-01-11
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Publication No.: US10475900B2Publication Date: 2019-11-12
- Inventor: Kai-Jiun Chang , Tsun-Min Cheng , Chih-Chieh Tsai , Jui-Min Lee , Yi-Wei Chen , Chia-Lung Chang , Wei-Hsin Liu
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710060808 20170125
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L21/285 ; H01L29/66 ; H01L27/108 ; H01L21/28

Abstract:
A method for manufacturing a semiconductor device with a cobalt silicide film is provided in the present invention. The method includes the steps of providing a silicon structure with an interlayer dielectric formed thereon, forming a contact hole in the interlayer dielectric to expose the silicon structure, depositing a cobalt film on the exposed silicon structure at a temperature between 300° C.-400° C., wherein a cobalt protecting film is in-situ formed on the surface of the cobalt film, performing a rapid thermal process to transform the cobalt film into a cobalt silicide film, and removing untransformed cobalt film.
Public/Granted literature
- US20180212034A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A COBALT SILICIDE FILM Public/Granted day:2018-07-26
Information query
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