Invention Grant
- Patent Title: Direct coupled biasing circuit for high frequency applications
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Application No.: US15646776Application Date: 2017-07-11
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Publication No.: US10476486B2Publication Date: 2019-11-12
- Inventor: Zaw Soe , KhongMeng Tham
- Applicant: Tensorcom, Inc.
- Applicant Address: US CA Culver City
- Assignee: NantWorks, LLC
- Current Assignee: NantWorks, LLC
- Current Assignee Address: US CA Culver City
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Main IPC: H03K3/012
- IPC: H03K3/012 ; H03K17/56 ; H01Q1/50 ; H04B5/00 ; G05F3/16

Abstract:
This invention eliminates the need for “capacitor coupling” or “transformer coupling,” and the associated undesirable parasitic capacitance and inductance associated with these coupling techniques when designing high frequency (˜60 GHz) circuits. At this frequency, the distance between two adjacent stages needs to be minimized. A resonant circuit in series with the power or ground leads is used to isolate a biasing signal from a high frequency signal. The introduction of this resonant circuit allows a first stage to be “directly coupled” to a next stage using a metallic trace. The “direct coupling” technique passes both the high frequency signal and the biasing voltage to the next stage. The “direct coupling” approach overcomes the large die area usage when compared to either the “AC coupling” or “transformer coupling” approach since neither capacitors nor transformers are required to transfer the high frequency signals between stages.
Public/Granted literature
- US20170310308A1 Direct Coupled Biasing Circuit for High Frequency Applications Public/Granted day:2017-10-26
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