Invention Grant
- Patent Title: Method for roughening the surface of a metal layer, thin film transistor, and method for fabricating the same
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Application No.: US15717527Application Date: 2017-09-27
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Publication No.: US10483129B2Publication Date: 2019-11-19
- Inventor: Jing Feng , Seung Jin Choi , Fangzhen Zhang , Wusheng Li , Zhijun Lv , Ce Ning , Jiushi Wang
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Arent Fox LLP
- Agent Michael Fainberg
- Priority: CN201710071436 20170209
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/027 ; H01L29/66 ; H01L29/786 ; G03F7/00 ; H01L27/12 ; G03F7/38 ; G03F7/20 ; G03F7/40 ; H01L21/321
Abstract:
The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.
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