Invention Grant
- Patent Title: Optoelectronic semiconductor device and apparatus with an optoelectronic semiconductor device
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Application No.: US15520666Application Date: 2015-10-21
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Publication No.: US10483256B2Publication Date: 2019-11-19
- Inventor: Juergen Moosburger , Andreas Ploessl
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102014116512 20141112
- International Application: PCT/EP2015/074353 WO 20151021
- International Announcement: WO2016/074891 WO 20160519
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L33/38 ; H01L33/62 ; H01L27/15 ; H01L33/40

Abstract:
An optoelectronic semiconductor device and an apparatus with an optoelectronic semiconductor device are disclosed. In an embodiment the optoelectronic semiconductor component has an emission region including a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer for generating radiation, and a protection diode region. The semiconductor component has a contact for electrically contacting the semiconductor component externally. The contact has a first contact region that is connected to the emission region in an electrically conductive manner. The contact has further a second contact region that is spaced apart from the first contact region and connected to the protection diode region in an electrically conductive manner. The first contact region and the second contact region can be electrically contacted externally by a mutual end of a connecting line.
Public/Granted literature
- US20170317067A1 Optoelectronic Semiconductor Device and Apparatus with an Optoelectronic Semiconductor Device Public/Granted day:2017-11-02
Information query
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