Invention Grant
- Patent Title: Dual nitride stressor for semiconductor device and method of manufacturing
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Application No.: US14714229Application Date: 2015-05-15
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Publication No.: US10483262B2Publication Date: 2019-11-19
- Inventor: Yu-Lin Yang , Chia-Cheng Ho , Chih Chieh Yeh , Cheng-Yi Peng , Tsung-Lin Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L27/092 ; H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L29/165 ; H01L29/267
Abstract:
A method for manufacturing a semiconductor device includes forming a fin structure over a substrate and forming a first gate structure over a first portion of the fin structure. A first nitride layer is formed over a second portion of the fin structure. The first nitride layer is exposed to ultraviolet radiation. Source/drain regions are formed at the second portion of the fin structure.
Public/Granted literature
- US20160336319A1 DUAL NITRIDE STRESSOR FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING Public/Granted day:2016-11-17
Information query
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