One method includes forming a gate above a semiconductor substrate, the gate comprising a gate structure and a gate cap positioned above the gate structure, forming a conductive source/drain metallization structure adjacent the gate in each of the source/drain regions and forming a recess in each of the conductive source/drain metallization structures. The method further includes forming a spacer structure that comprises recess filling portions that substantially fill the recesses and a portion that extends across the gate cap, wherein a portion of the gate cap is exposed within the spacer structure, forming an insulating material within the spacer structure and on the exposed portion of the gate cap, forming a gate contact opening that exposes a portion of an upper surface of the gate structure and forming a conductive gate contact structure (CB) in the conductive gate contact opening.