Invention Grant
- Patent Title: Capacitive tuning using backside gate
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Application No.: US15988987Application Date: 2018-05-24
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Publication No.: US10483392B2Publication Date: 2019-11-19
- Inventor: Ravi Pramod Kumar Vedula
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporate/Seyfarth Shaw LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/683 ; H01L21/84 ; H01L23/522 ; H01L23/528 ; H01L23/66 ; H01L27/12 ; H01L29/06 ; H01L29/423 ; H01L29/66
Abstract:
A radio frequency (RF) integrated circuit (RFIC) switch multi-finger transistor includes a first dual gate transistor having a first gate with a first gate length on a first side of a substrate, and a second gate with a second gate length on a second side of the substrate. The RFIC also includes a second dual gate transistor having a third gate with a third gate length on the first side of the substrate, and a fourth gate with a fourth gate length on the second side of the substrate. The second gate length is different than the fourth gate length, and the second dual gate transistor is coupled in series with the first dual gate transistor in the RFIC switch multi-finger transistor.
Public/Granted literature
- US20190189801A1 CAPACITIVE TUNING USING BACKSIDE GATE Public/Granted day:2019-06-20
Information query
IPC分类:
