公开(公告)号：US12224286B2

公开(公告)日：2025-02-11

申请号：US17481618

申请日：2021-09-22

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Vikram Sekar

IPC: H01L27/12 ,  H01L23/535

Abstract: A dual-sided MOS IC includes an isolation layer and a MOS transistor. The isolation layer separates the MOS IC into a MOS IC frontside and a MOS IC backside. The MOS transistor is on both the MOS IC frontside and the MOS IC backside. The MOS transistor includes MOS gates, a first source connection in a first subsection of the MOS IC frontside, and a second source connection in a second subsection of the MOS IC backside. The first and second source connections are electrically coupled together through a first front-to-backside connection extending through the isolation layer. The MOS transistor further includes a first drain connection in the first subsection of the MOS IC backside, and a second drain connection in the second subsection of the MOS IC frontside. The first and second drain connections are electrically coupled together through a second front-to-backside connection extending through the isolation layer.

公开(公告)号：US10522687B2

公开(公告)日：2019-12-31

申请号：US15879109

申请日：2018-01-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Stephen Alan Fanelli ,  Farid Azzazy

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423 ,  H01L27/12

Abstract: A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.

公开(公告)号：US12206400B2

公开(公告)日：2025-01-21

申请号：US17892800

申请日：2022-08-22

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Abhijeet Paul ,  Hyunchul Jung

IPC: H03K17/687 ,  H04B1/44 ,  H01L27/12

Abstract: A radio frequency integrated circuit (RFIC) is described. The RFIC includes a switch field effect transistor (FET). The switch FET includes a source region, a drain region, a body region, and a gate region. The RFIC also includes a dynamic bias control circuit. The dynamic bias control circuit includes at least one transistor coupled between the body region and the gate region of the switch FET.

公开(公告)号：US11081582B2

公开(公告)日：2021-08-03

申请号：US16788197

申请日：2020-02-11

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Ravi Pramod Kumar Vedula ,  Sivakumar Kumarasamy ,  George Pete Imthurn ,  Sinan Goktepeli

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/762 ,  H01L29/08 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

Abstract: A method of constructing an integrated circuit (IC) includes fabricating a metal oxide semiconductor field effect transistor (MOSFET) on a first surface of an insulator layer of the integrated circuit. The insulator layer is supported by a sacrificial substrate. The MOSFET includes an extended drain region. The method deposits a front-side dielectric layer on the MOSFET, bonds a handle substrate to the front-side dielectric layer, and then removes the sacrificial substrate. The method also fabricates multiple back gates on a second surface of the insulator layer. The second surface is opposite the first surface.

公开(公告)号：US10707866B1

公开(公告)日：2020-07-07

申请号：US16230884

申请日：2018-12-21

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Ravi Pramod Kumar Vedula ,  George Peter Imthurn ,  Christopher Nelles Brindle ,  Sinan Goktepeli

IPC: H03K17/687 ,  H03K17/10 ,  H03K17/284 ,  H01L27/12 ,  H01L23/50 ,  H01L21/76 ,  H01L21/84 ,  H01L23/66 ,  H01L21/762

Abstract: A dual sided contact switch has a first independent drain/source region of a multi-gate active device. The dual sided contact switch also has a first shared drain/source region of the multi-gate active device. The dual sided contact switch has a second independent drain/source region of the multi-gate active device, adjacent to the first shared drain/source region. The dual sided contact switch also has a second shared drain/source region of the multi-gate active device, adjacent to the first independent drain/source region. The dual sided contact switch has a gate region between the first independent drain/source region and the first shared drain/source region, and also between the second independent drain/source region and the second shared drain/source region.

公开(公告)号：US11277677B1

公开(公告)日：2022-03-15

申请号：US17117940

申请日：2020-12-10

Applicant: QUALCOMM Incorporated

Inventor： George Pete Imthurn ,  Ravi Pramod Kumar Vedula ,  Stephen Alan Fanelli

IPC: H04Q11/00

Abstract: An optically powered switch. An example optically powered switch generally includes a light source configured to output an optical signal. The example optically powered switch generally includes a photodiode configured to convert the optical signal to an electrical signal. The example optically powered switch generally includes a bias and control circuit configured to power at least one radio frequency (RF) switch using the electrical signal.

公开(公告)号：US10600910B2

公开(公告)日：2020-03-24

申请号：US16156729

申请日：2018-10-10

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Ravi Pramod Kumar Vedula ,  Sivakumar Kumarasamy ,  George Pete Imthurn ,  Sinan Goktepeli

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L21/762 ,  H01L29/786 ,  H01L27/12 ,  H01L21/28 ,  H01L29/08

Abstract: An integrated circuit is described. The integrated circuit includes a metal oxide semiconductor field effect transistor (MOSFET). The MOSFET is on a first surface of an insulator layer of the integrated circuit. The MOSFET including a source region, a drain region, and a front gate. The MOSFET also includes an extended drain region between the drain region and a well proximate the front gate. The integrated circuit also includes back gates on a second surface opposite the first surface of the insulator layer. The back gates are overlapped by the extended drain region.

公开(公告)号：US20180233600A1

公开(公告)日：2018-08-16

申请号：US15879109

申请日：2018-01-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Stephen Alan Fanelli ,  Farid Azzazy

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.

公开(公告)号：US12155381B2

公开(公告)日：2024-11-26

申请号：US18104409

申请日：2023-02-01

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Abhijeet Paul ,  Hyunchul Jung

IPC: H03K17/687

Abstract: A radio frequency (RF) device is described. The RF device includes a switch field effect transistor (FET), having a source region, a drain region, a body region, and a gate region. The RF device also includes a dynamic bias control circuit. The dynamic bias control circuit includes a first transistor coupled to the gate region of the switch FET by a gate resistor. The dynamic bias control circuit also includes a second transistor coupled to the first transistor and coupled to the body region of the switch FET by a body resistor. The dynamic bias control circuit further includes a capacitor coupled to the body region of the switch FET by the body resistor, and the gate region of the switch FET, by the gate resistor.

公开(公告)号：US11683065B2

公开(公告)日：2023-06-20

申请号：US17150610

申请日：2021-01-15

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  George Pete Imthurn ,  Anton Arriagada ,  Sinan Goktepeli

IPC: H04B1/44 ,  H03K17/687

CPC classification number: H04B1/44 ,  H03K17/6874

Abstract: A radio frequency (RF) switch includes switch transistors coupled in series. The RF switch includes a distributed gate bias network coupled to gate electrodes of the switch transistors. The RF switch also includes a distributed body bias network coupled to body electrodes of the switch transistors.