Invention Grant
- Patent Title: Substrate structure, semiconductor structure and method for fabricating the same
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Application No.: US15411957Application Date: 2017-01-20
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Publication No.: US10508020B2Publication Date: 2019-12-17
- Inventor: Tsai-Hao Hung , Shih-Chi Kuo , Tsung-Hsien Lee , Tao-Cheng Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: B81B1/00
- IPC: B81B1/00 ; B81C1/00
Abstract:
The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.
Public/Granted literature
- US20170129767A1 SUBSTRATE STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-05-11
Information query
