Systems and methods discussed herein relate to patterning substrates during lithography and microlithography to form features to a set or sets of critical dimensions using dose. The dose maps are generated based upon images captured during manufacturing to account for process variation in a plurality of operations employed to pattern the substrates. The dose maps are used along with imaging programs to tune the voltages applied to various regions of a substrate in order to produce features to a set or sets of critical dimensions and compensate for upstream or downstream operations that may otherwise result in incorrect critical dimension formation.