A cleaning apparatus of an exhaust path of a process reaction chamber used in a manufacturing of articles including a semiconductor or an LCD. The cleaning apparatus of the exhaust path includes a housing having an inflow pipe, connected to an upstream end of the exhaust path, an outflow pipe, connected to a downstream end of the exhaust path, and a connecting pipe disposed between the inflow pipe and the outflow pipe. A radio frequency generator in the housing applies radio frequency power to the inflow pipe and to the outflow pipe via respective coils. Plasma induced within the inflow and outflow pipes from RF power applied via the respective coils causes the generation of radicals from the exhaust gas flowing within. The radicals act to dislodge accumulated particulates within the exhaust path downstream of the cleaning apparatus.