- 专利标题： Forming a sacrificial liner for dual channel devices
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申请号： US15395637申请日： 2016-12-30
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公开(公告)号： US10510892B2公开(公告)日： 2019-12-17
- 发明人: Huiming Bu , Kangguo Cheng , Dechao Guo , Sivananda K. Kanakasabapathy , Peng Xu
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/16 ; H01L29/161 ; H01L29/06 ; H01L21/3065 ; H01L21/324 ; H01L21/8234 ; H01L21/8238 ; H01L21/84
摘要：
Semiconductor devices include one or more fins. Each fin includes a top channel portion formed from a channel material and a bottom substrate portion formed from a same material as an underlying substrate, the top channel portion having a different width than the bottom substrate portion. An isolation dielectric layer formed between and around the bottom substrate portion of the one or more fins. A space exists between at least a top portion of the isolation dielectric layer and the one or more fins. A gate dielectric is formed over the one or more fins and in the space.
公开/授权文献
- US20180090604A1 FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES 公开/授权日：2018-03-29
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