- 专利标题： Domain-distributed cryogenic signaling amplifier
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申请号： US16043754申请日： 2018-07-24
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公开(公告)号： US10511276B1公开(公告)日： 2019-12-17
- 发明人: Frederick A. Ware , Carl W. Werner , John Eric Linstadt
- 申请人： Rambus Inc.
- 申请人地址： US CA Sunnyvale
- 专利权人： Rambus Inc.
- 当前专利权人： Rambus Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Charles Shemwell
- 主分类号： H03F1/02
- IPC分类号： H03F1/02 ; H03F1/30 ; H03F3/16 ; H03F19/00 ; G06N10/00
摘要：
A signal amplifier is distributed between first and second IC devices and includes a low-power input stage disposed within the first IC device, a bias-current source disposed within the second IC device and an output stage disposed within the second IC device. The output stage includes a resistance disposed within the second IC device and having a first terminal coupled to a drain terminal of a transistor within the input stage via a first signaling line that extends between the first and second IC devices.
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