- Patent Title: Memory system performing error correction of address mapping table
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Application No.: US15718143Application Date: 2017-09-28
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Publication No.: US10514981B2Publication Date: 2019-12-24
- Inventor: Hyunsik Kim , Tae-Hwan Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2016-0147679 20161107
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10 ; G06F12/1009 ; G11C29/52

Abstract:
A memory system includes a nonvolatile memory device, a dynamic random access memory (DRAM) configured to store an address mapping table for an access to the nonvolatile memory device, and a controller configured to store, in the DRAM, the address mapping table that is divided in units of address mapping data, each of the units having a size of an interface of the DRAM, read, from the stored address mapping table, target address mapping data corresponding to a logical address that is received from a host, the target address mapping data including a target parity and physical addresses of the nonvolatile memory device, and perform an error correction on the read target address mapping data, using the target parity.
Public/Granted literature
- US20180129563A1 MEMORY SYSTEM PERFORMING ERROR CORRECTION OF ADDRESS MAPPING TABLE Public/Granted day:2018-05-10
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