Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
-
Application No.: US15715544Application Date: 2017-09-26
-
Publication No.: US10522446B2Publication Date: 2019-12-31
- Inventor: Atsushi Nishikizawa , Tadatoshi Danno
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2016-229032 20161125
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/56 ; H01L23/00 ; H01L23/31

Abstract:
In order to improve reliability of a semiconductor device, the semiconductor device includes a semiconductor chip, a die pad, a plurality of leads, and a sealing portion. The die pad and the leads are made of a metal material mainly containing copper. A plating layer is formed on a top surface of the die pad. The plating layer is formed by a silver plating layer, a gold plating layer, or a platinum plating layer. The semiconductor chip is mounted on the plating layer on the top surface of the die pad via a bonding material. The plating layer is covered by the bonding material not to be in contact with the sealing portion.
Public/Granted literature
- US20180151479A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2018-05-31
Information query
IPC分类: