发明授权
- 专利标题： Memory device
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申请号： US16127634申请日： 2018-09-11
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公开(公告)号： US10529735B2公开(公告)日： 2020-01-07
- 发明人: Reiko Komiya , Tatsuo Izumi , Takaya Yamanaka , Takeshi Nagatomo , Karin Takagi
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Minato-ku
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2018-045703 20180313
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/1157 ; G11C8/14 ; G11C7/18 ; H01L27/11556 ; H01L27/11524
摘要：
A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.
公开/授权文献
- US20190287997A1 MEMORY DEVICE 公开/授权日：2019-09-19
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