Invention Grant
- Patent Title: Manufacturing method of semiconductor device having magnetic substance film
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Application No.: US15263942Application Date: 2016-09-13
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Publication No.: US10529918B2Publication Date: 2020-01-07
- Inventor: Mitsuru Yamazaki , Koji Yamashita
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2015-182659 20150916
- Main IPC: H01L43/12
- IPC: H01L43/12 ; F27B3/08 ; F27D7/06 ; F27B5/04 ; F27D11/12 ; F27D19/00 ; F27D21/00

Abstract:
There is provided a semiconductor device manufacturing method which includes: loading a substrate with a magnetic substance film formed thereon into a process container; regulating an internal pressure of the process container to a first pressure lower than an atmospheric pressure; regulating the internal pressure of the process container from the first pressure to a second pressure higher than the first pressure; and magnetizing the magnetic substance film by applying a magnetic field to the magnetic substance film under the second pressure.
Public/Granted literature
- US20170077396A1 Semiconductor Device Manufacturing Method Public/Granted day:2017-03-16
Information query
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