Invention Grant
- Patent Title: Low impedance VCSELs
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Application No.: US15750833Application Date: 2015-08-10
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Publication No.: US10530129B2Publication Date: 2020-01-07
- Inventor: Sagi Mathai , Michael Renne Ty Tan , Wayne Victor Sorin
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Sheppard Mullin Richter & Hampton LLP
- International Application: PCT/US2015/044482 WO 20150810
- International Announcement: WO2017/027004 WO 20170216
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/183 ; H01S5/042 ; H01S5/187 ; H01S5/343

Abstract:
In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer end a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.
Public/Granted literature
- US20180233881A1 LOW IMPEDANCE VCSELS Public/Granted day:2018-08-16
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