Invention Grant
- Patent Title: RF power amplifier
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Application No.: US15857928Application Date: 2017-12-29
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Publication No.: US10530312B2Publication Date: 2020-01-07
- Inventor: Daniel C. Boire
- Applicant: BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Sand, Sebolt & Wernow LPA
- Agent Scott J. Asmus
- Main IPC: H03F3/68
- IPC: H03F3/68 ; H03F1/42 ; H03F3/21 ; H03F1/56 ; H03F3/19

Abstract:
An RF power amplifier includes an input coupler including a first resistor and a first capacitor, an input phase difference network of the input coupler including a first input direct current (DC) bias injection network and a second capacitor connected in series with the first resistor. The second capacitor increases a bandwidth of the RF power amplifier. The RF power amplifier may further include a first power amplifier and a second power amplifier. The first input DC bias injection network provides power to the first power amplifier and the second power amplifier. The RF power amplifier includes a lateral dimension narrower than a lateral dimension of an RF power amplifier comprising bias circuitry on two opposing sides.
Public/Granted literature
- US20190207566A1 RF POWER AMPLIFIER Public/Granted day:2019-07-04
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