Invention Grant
- Patent Title: Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures
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Application No.: US15358956Application Date: 2016-11-22
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Publication No.: US10532926B2Publication Date: 2020-01-14
- Inventor: Michael Daneman , Martin Lim , Kegang Huang , Igor Tchertkov
- Applicant: INVENSENSE, INC.
- Applicant Address: US CA San Jose
- Assignee: INVENSENSE, INC.
- Current Assignee: INVENSENSE, INC.
- Current Assignee Address: US CA San Jose
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: B81B7/02
- IPC: B81B7/02 ; B81C1/00

Abstract:
A Microelectromechanical systems (MEMS) structure comprises a MEMS wafer. A MEMS wafer includes a handle wafer with cavities bonded to a device wafer through a dielectric layer disposed between the handle and device wafers. The MEMS wafer also includes a moveable portion of the device wafer suspended over a cavity in the handle wafer. Four methods are described to create two or more enclosures having multiple gas pressure or compositions on a single substrate including, each enclosure containing a moveable portion. The methods include: A. Forming a secondary sealed enclosure, B. Creating multiple ambient enclosures during wafer bonding, C. Creating and breaching an internal gas reservoir, and D. Forming and subsequently sealing a controlled leak/breach into the enclosure.
Public/Granted literature
- US20170297907A1 METHODS FOR CMOS-MEMS INTEGRATED DEVICES WITH MULTIPLE SEALED CAVITIES MAINTAINED AT VARIOUS PRESSURES Public/Granted day:2017-10-19
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