Invention Grant
- Patent Title: Anti-hacking mechanisms for flash memory device
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Application No.: US15784025Application Date: 2017-10-13
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Publication No.: US10534554B2Publication Date: 2020-01-14
- Inventor: Hieu Van Tran , Vipin Tiwari , Nhan Do
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/07 ; G11C16/04 ; G11C16/08 ; G11C16/10 ; G11C16/26 ; G11C16/34 ; H01L21/78 ; H01L27/11521 ; H01L29/423 ; H01L23/00

Abstract:
Apparatus, and an associated method, for enhancing security and preventing hacking of a flash memory device. The apparatus and method use a random number to offset the read or write address in a memory cell. The random number is generated by determining the leakage current of memory cells. In another embodiment, random data can be written or read in parallel to thwart hackers from determining contents of data being written or read by monitoring sense amplifiers.
Public/Granted literature
- US20190114097A1 ANTI-HACKING MECHANISMS FOR FLASH MEMORY DEVICE Public/Granted day:2019-04-18
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