- 专利标题： Semiconductor device extension insulation
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申请号： US15664990申请日： 2017-07-31
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公开(公告)号： US10535598B2公开(公告)日： 2020-01-14
- 发明人: Hung-Chih Yu , Chien-Mao Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L23/532 ; H01L23/528 ; H01L23/48 ; H01L21/768 ; H01L29/78
摘要：
A semiconductor device includes: a plurality of vertical conductive structures, wherein each of the plurality of vertical conductive structures extends through an isolation layer; and an insulated extension disposed horizontally between a first one and a second one of the plurality of vertical conductive structures.
公开/授权文献
- US20190035726A1 SEMICONDUCTOR DEVICE EXTENSION INSULATION 公开/授权日：2019-01-31
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