- 专利标题: High-speed MOSFET and IGBT gate driver
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申请号: US16116807申请日: 2018-08-29
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公开(公告)号: US10536145B2公开(公告)日: 2020-01-14
- 发明人: Anatoliy V. Tsyrganovich , Leonid A. Neyman
- 申请人: Littelfuse, Inc.
- 申请人地址: US IL Chicago
- 专利权人: LITTELFUSE, INC.
- 当前专利权人: LITTELFUSE, INC.
- 当前专利权人地址: US IL Chicago
- 主分类号: H03K19/0185
- IPC分类号: H03K19/0185 ; H03K17/687 ; H03K3/012
摘要:
A gate driver integrated circuit drives an output signal onto its output terminal and onto the gate of a power transistor. In a turn-on episode, a digital input signal transitions to a digital logic high level. In response, the gate driver integrated circuit couples the output terminal to a positive supply voltage terminal, thereby driving a positive voltage onto the gate of the power transistor. In response to a high-to-low transition of the digital input signal, the driver drives a negative voltage onto the output terminal and power transistor gate for a short self-timed period of time, and then couples the output terminal to a ground terminal, thereby driving the output terminal and power transistor gate up to ground potential. The output terminal and power transistor gate are then held at ground potential in anticipation of the next turn-on episode of the power transistor.
公开/授权文献
- US20180375518A1 High-Speed MOSFET and IGBT Gate Driver 公开/授权日:2018-12-27
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