Invention Grant
- Patent Title: Interconnection structure and method of forming the same
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Application No.: US14983412Application Date: 2015-12-29
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Publication No.: US10541204B2Publication Date: 2020-01-21
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/528 ; H01L21/768 ; H01L23/485 ; H01L23/522

Abstract:
An interconnection structure includes a non-insulator structure, a dielectric structure, and a conductive structure. The dielectric structure is present on the non-insulator structure. The dielectric structure has a trench opening and a via opening therein. The trench opening has a bottom surface and at least one recess in the bottom surface. The via opening is present between the trench opening and the non-insulator structure. The conductive structure is present in the trench opening and the via opening and electrically connected to the non-insulator structure. The conductive structure is at least separated from the bottom of the recess.
Public/Granted literature
- US20170110398A1 INTERCONNECTION STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2017-04-20
Information query
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