Invention Grant
- Patent Title: Optical sensor device having a depleted doping region adjacent to a control electrode and method for manufacturing the optical sensor device
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Application No.: US15783071Application Date: 2017-10-13
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Publication No.: US10541261B2Publication Date: 2020-01-21
- Inventor: Robert Roessler , Henning Feick , Matthias Franke , Dirk Offenberg , Stefano Parascandola , Jens Prima
- Applicant: Infineon Technologies AG , pmdtechnologies ag
- Applicant Address: DE DE
- Assignee: Infineon Technologies AG,pmdtechnologies ag
- Current Assignee: Infineon Technologies AG,pmdtechnologies ag
- Current Assignee Address: DE DE
- Agency: Design IP
- Priority: DE102016220161 20161014; DE102017202754 20170221
- Main IPC: H01L27/146
- IPC: H01L27/146 ; G01S17/08 ; H01L23/48 ; H01L31/02 ; H01L31/0232 ; H01L31/101

Abstract:
An optical sensor device includes a semiconductor substrate including a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, where the doping region is adjacent to the trench, where the doping region has a doping type different from the read out node, and where the doping region has a doping concentration so that the doping region remains depleted during operation.
Public/Granted literature
- US20180108692A1 OPTICAL SENSOR DEVICE AND METHOD FOR MANUFACTURING THE OPTICAL SENSOR DEVICE Public/Granted day:2018-04-19
Information query
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