- 专利标题: Charge pump overload detection
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申请号: US15209110申请日: 2016-07-13
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公开(公告)号: US10545193B2公开(公告)日: 2020-01-28
- 发明人: John Kevin Moore
- 申请人: STMicroelectronics (Research & Development) Limited
- 申请人地址: GB Buckinghamshire
- 专利权人: STMicroelectronics (Research & Development) Limited
- 当前专利权人: STMicroelectronics (Research & Development) Limited
- 当前专利权人地址: GB Buckinghamshire
- 代理机构: Seed IP Law Group LLP
- 主分类号: G01R31/40
- IPC分类号: G01R31/40 ; H02M3/07 ; G01R19/165
摘要:
One or more embodiments are directed to charge pump overload detection circuits which may be employed in imaging devices including one or more SPAD arrays, such as proximity sensors and time of flight sensors. One embodiment is directed to a charge pump overload detection circuit that includes a charge pump, a charge pump supply regulation device, a charge pump voltage regulation feedback loop and a charge pump overload detection comparator. The charge pump supplies an output voltage to a load, and the charge pump supply regulation device supplies a regulated voltage to an input of the charge pump. The charge pump voltage regulation feedback loop includes a feedback voltage generator that generates a feedback voltage based on the charge pump output voltage, and an amplifier that generates and provides a charge pump regulation control signal to the charge pump supply regulation device based on a difference between the feedback voltage and a reference voltage. The charge pump overload detection comparator compares the charge pump regulation control signal with a second reference voltage, and outputs an overload signal based on the comparison.
公开/授权文献
- US20180017632A1 CHARGE PUMP OVERLOAD DETECTION 公开/授权日:2018-01-18
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