Invention Grant
- Patent Title: Adaptive gate-biased field effect transistor for low-dropout regulator
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Application No.: US16170700Application Date: 2018-10-25
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Publication No.: US10545523B1Publication Date: 2020-01-28
- Inventor: Zhengzheng Wu , Chao Song
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP/Qualcomm
- Main IPC: G05F1/595
- IPC: G05F1/595 ; G05F1/575

Abstract:
A load circuit of a low-dropout (LDO) regulator is disclosed herein according to certain aspects. The load circuit includes a field effect transistor having a source coupled to a supply rail, a gate, and a drain coupled to a gate of a pass transistor of the LDO regulator. The load circuit also includes an adjustable voltage source coupled between the drain and the gate of the field effect transistor, and a voltage control circuit configured to detect a change in a current load through the pass transistor, and to adjust a voltage of the adjustable voltage source based on the detected change in the current load.
Information query
IPC分类: