Invention Grant
- Patent Title: Semiconductor device and electronic apparatus including semiconductor chips including an insulated gate bipolar transistor and a diode
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Application No.: US16146097Application Date: 2018-09-28
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Publication No.: US10546839B2Publication Date: 2020-01-28
- Inventor: Akira Muto , Norio Kido
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONIC CORPORATION
- Current Assignee: RENESAS ELECTRONIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L23/28 ; H01L25/18 ; H01L23/00 ; H02P25/092 ; H01L23/31 ; H01L23/498 ; H02P27/06

Abstract:
An electronic apparatus includes a wiring board including a main surface on which a first wiring and a second wiring are formed, a first semiconductor device mounted on the main surface of the wiring board, and a second semiconductor device mounted on the main surface of the wiring board. Each of the first semiconductor device and the second semiconductor device includes a first semiconductor chip including an insulated gate bipolar transistor, a second semiconductor chip including a diode, a first lead electrically connected to an emitter electrode pad formed on a first front surface of the first semiconductor chip, a second lead electrically connected to an anode electrode pad formed on a second front surface of the second semiconductor chip, and a first terminal electrically connected to a collector electrode formed on a first back surface of the first semiconductor chip.
Public/Granted literature
- US20190088629A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2019-03-21
Information query
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